2SA1576A_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1576A
Transistors
■ Features
● Excellent hFE linearity
● Complements the 2SC4081
1.Base
2.Emitter
3.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-60
VCEO
-50
V
VEBO
-6
IC
-150
mA
PC
200
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -50 μA， IE=0
VCEO Ic= -1 mA，IB=0
VEBO IE= -50μA， IC=0
ICBO VCB= -60 V , IE=0
IEBO VEB= -6V , IC=0
VCE(sat) IC=-50 mA, IB=-5 mA
VBE(sat) IC=-50 mA, IB=-5 mA
hFE VCE= -6V, IC= -1mA
Cob VCB= -12V,IE=0, f=1MHz
fT
VCE= -12V, IC= -2mA,f=30MHz
Min Typ Max Unit
-60
-50
V
-6
-0.1
uA
-0.1
-0.5
V
-1.2
120
560
4
5
pF
140
MHz
■ Classification of hfe
Type
2SA1576A-Q
Range
120-270
Marking
FQ
2SA1576A -R
180-390
FR
2SA1576A -S
270-560
FS
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