2SA1576 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP silicon Transistor

SMD Type
PNP silicon Transistor
2SA1576
Transistors
Features
Low noise:NF=0.5dB(TYP.)
Epitaxial planar type.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-40
V
VEBO
-5
V
IC
-100
A
PC
200
W
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
Testconditons
BVCBO IC=-50ìA
BVCEO IC=-1mA
BVEBO IE=-50ìA
ICBO VCB=-30V
IEBO VEB=-4V
VCE(sat) IC/IB=-50mA/-5mA
hFE VCE=-6V, IC=-1mA
fT VCE=-12V, IE=2mA
Cob VCB=-12V, IE=0A, f=1MHz
hFE Classification
Marking
hFE
Q
120 270
R
180 390
S
270 560
1 Emitter
2 Base
3 Collector
Min Typ Max Unit
-50
V
-40
V
-5
V
-0.5 ìA
-0.5 ìA
-0.5 V
120
560
140
MHz
3.5
pF
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