2SA1566_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
■ Features
● Low frequency amplifier
Transistors
PNP Transistors
2SA1566
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
Unit: mm
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
0.15 +0.02
-0.02
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage (Note.1)
Base - emitter saturation voltage (Note.1)
DC current gain
(Note.1)
Note.1: Pulse test
Symbol
Rating
Unit
VCBO
-120
VCEO
-120
V
VEBO
-5
IC
-100
mA
PC
150
mW
TJ
150
℃
Tstg
-55 to 150
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，RBE= ∞
VEBO IE= -100μA， IC=0
ICBO VCB= -70 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-10 mA, IB=-1 mA
VBE(sat) IC=-10 mA, IB=-1 mA
hFE VCE= -12V, IC= -2mA
Min Typ Max Unit
-120
-120
V
-5
-0.1
uA
-0.1
-0.15
V
-1
250
800
■ Classification of hfe
Type
2SA1566-D
Range
250-500
Marking
JID
2SA1566-E
400-800
JIE
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