2SA1532_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1532
Transistors
■ Features
● High transition frequency fT.
● Complementary to 2SC3930
1.Base
2.Emitter
3.Colletor
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-30
VCEO
-20
V
VEBO
-5
IC
-30
mA
PC
150
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-Emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Noise Figure
Reverse transfer impedance
Common emitter reverse transfer
capacitance
Transition frequency
Symbol
Test Conditions
Min Typ Max Unit
VCBO Ic= -100 μA， IE=0
-30
VCEO Ic= -1 mA，IB= 0
-20
V
VEBO IE= -100μA， IC=0
-5
ICBO VCB= -30 V , IE=0
-0.1
ICEO VCE= -20 V , IB=0
-100 uA
IEBO VEB= -5V , IC=0
-0.1
VCE(sat) IC=-10 mA, IB=-1 mA
-0.1
VBE(sat) IC=-10 mA, IB=-1 mA
-1.2 V
VBE VCE= -10V, IC= -1mA
-0.7
hFE VCE= -10V, IC= -1mA
70
220
NF VCB = –10V, IE = 1mA, f = 5MHz
2.8 4 dB
Zrb VCB = –10V, IE = 1mA, f = 2MHz
22 60 Ω
Cre
VCE = –10V, IC = –1mA
f = 10.7MHz
1.2 2
pF
fT
VCE= -10V, IE= 1 mA,f=200MHz 150 300
MHz
■ Classification of hfe
Type
2SA1532-B
Range
70-140
Marking
EB
2SA1532-C
110-220
EC
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