2SA1484_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
TransistIoCrs
PNP Transistors
2SA1484
■ Features
● Collector Current Capability IC=100mA
● Collector Emitter Voltage VCEO=-90V
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 ^+0.02
-0.02
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-90
V
VCEO
-90
V
VEBO
-5
V
IC
-100
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
* Pulse test.
Symbol
Test conditions
V(BR)CBO IC = -10 uA, IE = 0
V(BR)CEO IC = -1 mA, RBE =
V(BR)EBO IE = -10 uA, IC = 0
ICBO VCB = -70 V, IE = 0
IEBO VEB = - 4V, IC = 0
hFE VCE = -12 V, IC = -2 mA ( * )
VCE(sat) IC = -10 mA, IB = -1 mA ( * )
VBE(sat) IC = -10 mA, IB = -1 mA ( * )
Min Typ Max Unit
-90
V
-90
V
-5
V
-0.1 uA
-0.1 uA
250
800
-0.15 V
-1
V
■ Classification of hfe
Type
2SA1484-D
Range
250-500
Marking
IRD
2SA1484-E
400-800
IRE
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