2SA1483 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH FREQUENCY AMPLIFIER, VIDEO AMPLIFIER, HIGH SPEED SWITCHING APPLICATIONS)

SMD Type
Transistors
High Frequency Amplifier Applications
2SA1483
Features
High Transition Frequency: fT = 200MHz(typ.)
Low Collector Output Capacitance: Cob = 3.5pF(typ.)
Complementary to 2SC3803
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-200
mA
Base Current
IB
-50
mA
Collector Power Dissipation
PC
500
mW
PC *
1.0
W
Jumction temperature
Tj
150
Storage temperature Range
Tstg
-55 to +150
* Mounted on a ceramic substrate (250 mm² x 0.8t)
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Input Impedance (real part)
Collector Output Capacitance
Turn-On Time
Storage Time
Fall Time
Symbol
Testconditons
ICBO VCB = -45V , IE = 0
IEBO VEB = -5V , IC = 0
VCE = -1V , IC = -10mA
hFE
VCE = -3V , IC = -200mA
VCE(sat) IC = -100mA , IB = -10mA
VBE(sat) IC = -100mA , IB = -10mA
fT VCE = -10V , IC = -10mA
Re(hie) VCB = -10V , IE = 10mA , f = 200MHz
Cob VCB = -10V , IE = 0 , f = 1MHz
ton
tstg ^{See Test Circuit.}
tf
Min Typ Max Unit
-0.1 uA
-0.1 uA
40
240
20
-0.3 V
-1.0 V
100 200
MHz
120
3.5 5 pF
40
ns
250
ns
30
ns
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