2SA1468 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

SMD Type
Silicon PNP Epitaxial
2SA1468
Transistors
Features
High voltage amplifier.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-180
V
VCEO
-180
V
VEBO
-5
V
IC
-100
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
DC current transfer ratio
Collector to emitter saturation voltage
Base emitter voltage
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
V(BR)CBO IC = -10 ìA, IE = 0
V(BR)CEO IC = -0.5 mA, RBE =
V(BR)EBO IE = -10 ìA, IC = 0
hFE VCE = -12 V,IC = -2 mA
VCE(sat) IC = -30 mA,IB = -3 mA
VBE VCE = -12 V, IC = -2 mA
fT VCE = -12 V,IC = -10 mA
Cob VCB = -10 V, IE = 0,f = 1 MHz
hFE Classification
Marking
Rank
hFE
INB
B
100 200
INC
C
160 320
Min Typ Max Unit
-180
V
-180
V
-5
V
100
320
-0.5 V
-1
V
200
MHz
3.5
pF
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