2SA1464_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
■ Features
● High fT : fT =400MHz
● Complementary to 2SC3739
PNP Transistors
2SA1464
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
-60
-40
-5
-500
200
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage *
Base - emitter saturation voltage *
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
Ic= -100 μA， IE=0
Ic= -1 mA， IB=0
IE= -100μA， IC=0
VCB= -40 V , IE=0
VEB= -4V , IC=0
IC=-500 mA, IB=-50 mA
IC=-500 mA, IB=-50 mA
DC current gain *
Turn-on time
Storage time
Turn -off time
hFE(1)
hFE(2)
ton
tstg
toff
VCE= -2V, IC= -150mA
VCE=- 2V, IC= -500mA
VCC=-30V IC= -150mA,
IB1=-IB2= -15mA
Collector output capacitance
Cob VCB= -10V, IE= 0,f=1MHz
Transition frequency
* : Pulsed:PW ≤ 350us,Duty Cycle ≤ 2℅
■ Classification of hfe(1)
fT
VCE= -10V, IE= 20mA
Type
2SA1464-Y12 2SA1464-Y13 2SA1464-Y14
Range
75-150
100-200
150-300
Marking
Y12
Y13
Y14
1.Base
2.Emitter
3.collector
Unit
V
mA
mW
℃
Min Typ Max Unit
-60
-40
V
-5
-0.1
uA
-0.1
-0.45 -0.75
V
-1 -1.3
75 140 300
20 50
35
225 ns
255
5
8
pF
150 400
MHz
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