2SA1461 Datasheet, PDF (1/1 Pages) NEC – HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

SMD Type
PNP Silicon Epitaxia
2SA1461
TransistIoCrs
Features
High speed switching: tstg=110ns.
High gain bandwidth product: fT=510MHz.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Maximum Total power dissipation
at 25 ambient temperature
Maximum Junction temperature
Maximum Storage temperature
Symbol
Rating
Unit
VCBO
-40
V
VCEO
-40
V
VEBO
-5
V
IC
-200
mA
PT
200
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
*. PW 350ìs,duty cycle 2%
hFE Classification
Marking
hFE
Y22
75 150
Y23
100 200
Symbol
Testconditons
ICBO VCB = -30V, IE=0
IEBO VEB = -3V, IC=0
VCE = -1V , IC = -10mA
hFE
VCE = -1V , IC = -100mA
VCE(sat) IC = -50mA , IB = -5mA
VBE(sat) IC = -50mA , IB = -5mA
fT VCE = -20V , IE = 10mA
Cob VCB = -5V , IE = 0 , f = 1.0MHz
ton VCC = -3V ,
tstg IC = -10mA ,
toff IB1 = -IB2 = -1mA
Y24
150 300
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-100 nA
-100 nA
75 180 300
25 100
-0.1 -0.4 V
-0.8 -0.95 V
200 510
MHz
2.5 4.5 pF
70 ns
110 225 ns
300 ns
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