2SA1455K Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Epitaxial Planar PNP Silicon Transistor

SMD Type
Transistors
Epitaxial Planar PNP Silicon Transistor
2SA1455K
Features
High breakdown voltage:VCEO=-120V
Low noise design:NF=0.2dB(Typ.)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-120
V
VCEO
-120
V
VEBO
-5
V
IC
-50
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
Testconditons
BVCBO IC=-50ìA
BVCEO IC=-1mA
BVEBO IE=-50ìA
ICBO VCB=-100V
IEBO VEB=-4V
hFE VCE=-6V, IC=-2mA
VCE(sat) IC=-10mA, IB=-1mA
fT VCE=-12V, IE= 2mA, f=30MHz
Cob VCB=-12V, IE=0A, f=1MHz
Min Typ Max Unit
-120
V
-120
V
-5
V
-0.5 ìA
-0.5 ìA
180
820
-0.5 V
140
MHz
3.2
pF
hFE Classification
Marking
Rank
hFE
R
180 390
G
S
270 560
E
390 820
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