2SA1434 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – High-hFE, Low-Frequency General-Purpose Amp Applications

SMD Type
TransistIoCrs
PNP Epitaxial Planar Silicon Transistor
2SA1434
Features
Adoption of FBET process.
High DC current gain (hFE=500 to 1200).
Low collector-to-emitter saturation voltage
(VCE(sat) 0.5V).
High VEBO (VEBO 15V).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-50
V
VEBO
-15
V
IC
-100
mA
Icp
-200
mA
PC
200
mW
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Marking
Marking
FL
Symbol
Testconditons
ICBO VCB = -40V, IE=0
IEBO VEB = -10V, IC=0
hFE VCE = -5V , IC = -10mA
fT VCE = -10V , IC = -10mA
Cob VCB = -10V , f = 1.0MHz
VCE(sat) IC = -50mA , IB = -1mA
VBE(sat) IC = -10ìA , IB = -1mA
V(BR)CBO IC = -10ìA , IE = 0
V(BR)CEO IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
500 800 1200
100
MHz
4.8
pF
-0.2 -0.5 V
-0.8 -1.1 V
-60
V
-50
V
-15
V
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