2SA1434-3 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1434
TransistIoCrs
Features
Adoption of FBET process.
High DC current gain (hFE=500 to 1200).
Low collector-to-emitter saturation voltage
(VCE(sat) 0.5V).
High VEBO (VEBO 15V).
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Icp
PC
Tj
Tstg
Rating
-60
-50
-15
-100
-200
200
125
-55 to +125
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Common base output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1mA，RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -40V , IE=0
IEBO VEB= -10V , IC=0
VCE(sat) IC=-50 mA, IB=- 1mA
VBE(sat) IC=-10 uA, IB=- 1mA
hFE VCE= -5V, IC= -10mA
Cob VCB= -10V, f=1MHz
fT
VCB= -10V,IC=-10mA
Marking
Marking
FL
Unit
V
V
V
mA
mA
mW
Min Typ Max Unit
-60
-50
V
-15
-100
nA
-100
-0.2 -0.5
V
-0.8 -1.1
500 800 1200
4.8
pF
100
MHz
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