2SA1419_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1419
Transistors
Features
Adoption of FBET, MBIT Processes
High Breakdown Voltage and Large Current Capacity
● Complementary to 2SC3649
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulsed
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-180
-160
-6
-1.5
-2.5
500
150
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on time
Storage time
Fall time
Output capacitance
Transition frequency
■ Classification of hfe
Type
2SA1419-R
Range
100-200
Marking
AER*
2SA1419-S
140-280
AES*
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -120 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-500mA, IB=- 25mA
VBE(sat) IC=-500mA, IB=- 25mA
VCE= -5V, IC= -100mA
hFE
VCE= -5V, IC= -10mA
ton
ts
See Test Circuit.
tf
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -10V, IE= -50mA
2SA1419-T
200-400
AET*
Unit
V
A
mW
℃
Min Typ Max Unit
-180
-160
V
-6
-1
uA
-1
-0.2 -0.5
V
-0.85 -1.2
100
400
80
40
700
ns
40
22
pF
120
MHz
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