2SA1417_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1417
Transistors
Features
Adoption of FBET, MBIT Processes
High Breakdown Voltage and Large Current Capacity
● Complementary to 2SC3647
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulsed
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-120
-100
-6
-2
-3
500
150
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on time
Storage time
Fall time
Output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -100 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-1A, IB=- 100mA
VBE(sat) IC=-1A, IB=- 100mA
hFE VCE= -5V, IC= -100mA
ton
ts
See Test Circuit.
tf
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -10V, IE= -100mA
■ Classification of hfe
Type
Range
Marking
2SA1417-R
100-200
ACR*
2SA1417-S
140-280
ACS*
2SA1417-T
200-400
ACT*
Unit
V
A
mW
℃
Min Typ Max Unit
-120
-100
V
-6
-0.1
uA
-0.1
-0.22 -0.6
V
-0.85 -1.2
100
400
80
750
ns
40
25
pF
120
MHz
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