2SA1416 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – High-Voltage Switching Applications

SMD Type
Transistors
High-Voltage Switching Applications
2SA1416
Features
Adoption of FBET, MBIT Processes
High Breakdown Voltage and Large Current Capacity
Fast Switching Time
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-120
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current
IC
-1
A
Collector Current (Pulse)
ICP
-2
A
Collector Power Dissipation
PC
500
mW
PC *
1.3
W
Jumction temperature
Tj
150
Storage temperature Range
Tstg
* Mounted on ceramic board (250 mm² x 0.8 mm)
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Gain-Bandwidth Product
Collector Output Capacitance
Turn-On Time
Storage Time
Fall Time
Symbol
Testconditons
ICBO VCB = -100V , IE = 0
IEBO VEB = -4V , IC = 0
V(BR)CBO IC = -10uA , IE = 0
V(BR)CEO IC = -1mA , RBE =
V(BR)EBO IE = -10uA , IC = 0
hFE VCE = -5V , IC = -100mA
VCE(sat) IC = -400mA , IB = -40mA
VBE(sat) IC = -400mA , IB = -40mA
fT VCE = -10V , IC = -100mA
Cob VCB = -10V , IE = 0 , f = 1MHz
ton
tstg ^{See Test Circuit.}
tf
Min Typ Max
-100
-100
-120
-100
-6
100
400
-0.2 -0.6
-0.85 -1.2
120
13
Unit
nA
nA
V
V
V
V
V
MHz
pF
80
700
ns
40
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