2SA1415_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1415
Transistors
Features
Adoption of FBET Process
High Breakdown Voltage (VCEO = 160V)
Excellent Linearlity of hFE and Small Cob
Fast Switching Speed
● Complementary to 2SC3645
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulsed
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-180
-160
-5
-140
-200
500
150
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on time
Storage time
Fall time
Output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -80 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-50mA, IB=- 5mA
VBE(sat) IC=-50mA, IB=- 5mA
hFE VCE= -5V, IC= -10mA
ton
ts
See Test Circuit.
tf
Cob VCB= -10V, IE= 0,f =1MHz
fT
VCE= -10V, IE= -10mA
■ Classification of hfe
Type
Range
Marking
2SA1415-R
100-200
AAR*
2SA1415-S
140-280
AAS*
2SA1415-T
200-400
AAT*
Unit
V
mA
mW
℃
Min Typ Max Unit
-180
-160
V
-5
-0.1
uA
-0.1
-0.14 -0.4
V
-1.2
100
400
0.1
0.15
us
0.1
4
pF
150
MHz
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