2SA1413-Z_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
■ Features
● High Voltage:VCEO=-600V
● High Speed : tf ≤ 1us
● Complement to 2SC3632-Z
PNP Transistors
2SA1413-Z
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
Transistors
2.30 +0.1
-0.1
0.50 +0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
m ax
■ Absolute Maximum Ratings Ta = 25℃
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Base
2 Collector
3 Emitter
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse (Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-600
-600
-7
-1
-2
2
150
-55 to 150
Note.1: PW ≤ 10ms,Duty Cycle ≤ 5℅
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage (Note.1)
Base - emitter saturation voltage (Note.1)
DC current gain
(Note.1)
Turn-on time
Storage time
Turn -off time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -600 V , IE=0
IEBO VEB= -7V , IC=0
VCE(sat) IC=-300 mA, IB=-60mA
VBE(sat) IC=-300 mA, IB=-60mA
hFE(1) VCE= -5V, IC= -100mA
hFE(2) VCE=- 5V, IC= -500mA
ton
tstg
VCC=-250V,IC=-0.5A,
IB1=-IB2=-0.1A,RL=500Ω
toff
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -10V, IE= 50mA
Note.1 : Pulsed:PW ≤ 350us,Duty Cycle ≤ 2℅
■ Classification of hfe(1)
Unit
V
A
W
℃
Min Typ Max
-600
-600
-7
-10
-10
-0.28 -1
-0.85 -1.2
30 58 120
5 19
0.1 0.5
3.5 5
0.08 0.5
42
28
Unit
V
uA
V
us
pF
MHz
Type
2SA1413-Z-M 2SA1413-Z-L 2SA1413-Z-K
Range
Marking
30-60
**M
40-80
**L
60-120
**K
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