2SA1411_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
TransistIoCrs
PNP Transistors
2SA1411
Features
Very high DC current gain:hFE=500 to 1600.
High VEBO Voltage:VEBO=-10V
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
at 25 ambient temperature
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-25
V
VCEO
-25
V
VEBO
-10
V
IC
-150
mA
PT
200
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
VCEO
VEBO
ICBO
Ic= -1 mA， IB=0
IE= -100μA， IC=0
VCB= -25 V , IE=0
Emitter cut-off current
IEBO VEB= -7V , IC=0
Collector-emitter saturation voltage *
VCE(sat) IC=-50mA, IB=- 5mA
Base - emitter saturation voltage *
VBE(sat) IC=-50mA, IB=- 5mA
Base - emitter saturation voltage *
VBE VCE= -5V, IC= -1mA
DC current gain *
VCE= -5V, IC= -1mA
hFE
VCE= -5V, IC= -100mA
Turn-on time
Storage time
Turn-off time
ton
ts
IC=-50mA,VBE(off)=2.7V, VCC=-10V
,IB1=IB2=-1mA
toff
Output capacitance
Cob VCB= -5V, IE= 0,f-1MHz
Transition frequency
fT
VCE= -5V, IE= -10mA
* PW 350us,duty cycle 2%
■ Classification of hfe
Type
2SA1411-M15 2SA1411-M16
Range
500-1000
800-1600
Marking
M15
M16
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-25
-25
V
-10
-0.1
uA
-0.1
-0.15 -0.3
V
-0.8 -1.2
-580
mV
500 1000 1600
200 400
0.12
0.58
us
0.75
4.6
pF
200
MHz
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