2SA1411 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SILICON TRANSISTOR

SMD Type
Silicon PNP Epitaxia
2SA1411
TransistIoCrs
Features
Very high DC current gain:hFE=500 to 1600.
High VEBO Voltage:VEBO=-10V
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
at 25 ambient temperature
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-25
V
VCEO
-25
V
VEBO
-10
V
IC
-150
mA
PT
200
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base-emitter voltage *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
* PW 350ìs,duty cycle 2%
hFE Classification
Marking
hFE
M15
500 1000
M16
800 1600
Symbol
Testconditons
ICBO VCB = -25 V, IE = 0
IEBO VEB = -7 V, IC = 0
hFE VCE = -5 V, IC = -1 mA
VBE VCE = -5 V, IC = -1 mA
VCE(sat) IC = -50mA , IB = -5mA
VBE(sat) IC = -50mA , IB = -5mA
fT VCE = -5V , IE = 10mA
Cob VCB = -5V , IE = 0 , f = 1.0MHz
ton VCC = -10V , VBE(off) = 2.7V ,
tstg IC = -50mA ,
toff IB1 = -IB2 = -1mA
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-100 nA
-100 nA
500 1000 1600
-580
mV
-0.15 -0.3 V
-0.8 -1.2 V
200
MHz
4.6
pF
0.12
ns
0.58
ns
0.75
ns
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