2SA1400-Z Datasheet, PDF (1/1 Pages) NEC – PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

SMD Type
Transistors
Features
High Voltage: VCEO=-400V
High speed:tr 1.0ìs
Silicon Transistor
2SA1400-Z
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse) *1
Total power Dissipation (Ta=25 ) *2
Junction Tmeperature
Storage Temperature
Symbol
Rating
Unit
VCBO
-400
V
VCEO
-400
V
VEBO
-7
V
IC
-0.5
A
IC
-1
A
PT
2
W
Tj
150
Tstg
-55 to 150
*1 pw 300ìs,Duty Cycle 10%
*2 When mounted on ceramic substrate of 7.5cm²X0.7mm
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain*
Collector Saturation Voltage *
Base Saturation Voltage *
Turn-on Time
Storage Time
Fall time
* PW 350ìs,Duty Cycle 2%
Symbol
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
ton
tstg
tf
Testconditons
VCB=-400V,IE=0
VEB=-5V,IC=0
VCE=-5V,IC=-50mA
IC=-100mA,IB=-10mA
IC=-100mA,IB=-10mA
IC=-100mA,RL=1.5KÙ
IB1=-IB2=-10mA,VCC=-150V
PW 50ìs,Duty Cycle 2%
hFE Classification
Marking
hFE
N
30 to 60
M
40 to 80
L
60 to 120
K
100 to 200
Min Typ Max Unit
-100 ìA
-10 V
30
200
-1 V
-1.2 V
1
5 ìs
1
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