2SA1385-Z_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Features
Low VCE(sat):VCE(sat)=-0.18 V TYP.
● Complement to 2SC3518-Z
PNP Transistors
2SA1385-Z
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
Transistors
2.30 +0.1
-0.1
0.50 +0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
m ax
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current pulse *
Total power dissipation
Junction temperature
Storage temperature
* PW 10ms, duty cycle 50%.
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage *
Base - emitter saturation voltage *
DC current gain *
Turn-on time
Storage time
Fall time
Transition frequency
* PW 350us, duty cycle 2%.
■ Classification of hfe
Marking
hFE
M
100 200
L
160 320
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-60
V
VEBO
-7
V
IC
-5
A
ICP
-7
A
PT
10
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -50 V , IE=0
IEBO VEB= -7V , IC=0
VCE(sat) IC=-2A, IB=- 0.2A
VBE(sat) IC=-2A, IB=- 0.2A
VCE= -1V, IC= -2A
hFE
VCE= -1V, IC= -5A
ton
ts
IC=-2A,IB1=-IB2=-0.2A,RL=50Ω,
VCC=-10V
tf
fT
VCE= -10V, IC= -0.5A
Min Typ Max Unit
-60
-60
V
-7
-10
uA
-10
-0.18 -0.3
V
-1.2
100 200 400
50 100
0.08 1
0.55 2.5 us
0.18 1
140
MHz
K
200 400
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