2SA1369_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1369
Transistors
Features
High Collector Current (ICM = -3A, IC = -1.5A)
High Collector Dissipation PC = 500mW
Small Package For Mounting
Complementary to 2SC3439
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Collector Power Dissipation
Jumction temperature
Storage temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Rating
-30
-20
-6
-1.5
-3
500
+150
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector Output Capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -20 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-1A, IB=- 20mA
VBE(sat) IC=-1A, IB=- 20mA
hFE VCE= -6V, IC= -500mA
Cob VCE= -10V, IE= 0,f=1MHz
fT
VCE= -10V, IE= 10mA
■ Classification of hfe
Type
Range
Marking
2SA1369-G
400-800
GG
2SA1369-H
600-1200
GH
Unit
V
V
V
A
A
mW
Min Typ Max Unit
-30
-20
V
-6
-0.1
uA
-0.1
-0.25 -0.5
V
-1.2
400
1200
37
pF
90
MHz
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