2SA1368_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1368
Transistors
Features
High Voltage VCEO = -100V
High Collector Current (ICM = -800mA)
High Collector Dissipation PC = 500mW
Small Package For Mounting
Complementary to 2SC3438
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Collector Power Dissipation
Jumction temperature
Storage temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Rating
-100
-100
-5
-500
-800
500
150
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector Output Capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -50 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-150mA, IB=- 15mA
VBE(sat) IC=-150mA, IB=- 15mA
hFE VCE= -10V, IC= -10mA
Cob VCE= -10V, IE= 0,f=1MHz
fT
VCE= -10V, IE= 10mA
■ Classification of hfe
Type
Range
Marking
2SA1368-C
55-110
EC
2SA1368-D
90-180
ED
2SA1368-E
150-300
EE
Unit
V
V
V
mA
mA
mW
Min Typ Max Unit
-100
-100
V
-5
-0.1
uA
-0.1
-0.15 -0.5
V
-1.2
55
300
11
pF
130
MHz
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