2SA1365_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1365
TransistIoCrs
Features
Low collector to emitter saturation voltage.
Excellent linearity nof DC forward current gain.
Super mini package for easy mounting.
High collector current.
High gain band width product.
● Complementary to 2SC3440
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Peak Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC
TJ
Tstg
Rating
-25
-20
-4
-700
-1
150
150
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain *
Transition frequency
* It shows hFE classification in right table.
■ Classification of hfe
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -25 V , IE=0
IEBO VEB= -2V , IC=0
VCE(sat) IC=-500mA, IB=- 25mA
VBE(sat) IC=-500mA, IB=- 25mA
hFE VCE= -4V, IC= -100mA
fT
VCE= -6V, IE= 10mA
Marking
hFE
AE
150 300
AF
250 500
AG
400 800
Unit
V
mA
A
mW
℃
Min Typ Max Unit
-25
-20
V
-4
-100
nA
-100
-0.2 -0.5
V
-1.2
150
800
100 180
MHz
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