2SA1364_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1364
Transistors
Features
High Voltage VCEO = -60V
High Collector Current (IC = -1A)
High Collector Dissipation PC = 500mW
Small Package For Mounting
Complementary to 2SC3444
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Collector Power Dissipation
Jumction temperature
Storage temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Rating
-60
-60
-6
-1
-2
500
150
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -2 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -50 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-500mA, IB=- 25mA
VBE(sat) IC=-500mA, IB=- 25mA
hFE VCE= -4V, IC= -100mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -2V, IE= 10mA
■ Classification of hfe
Type
Range
Marking
2SA1364-C
55-110
CC
2SA1364-D
90-180
CD
2SA1364-E
150-300
CE
Unit
V
V
V
A
A
mW
Min Typ Max Unit
-60
-60
V
-6
-200
nA
-200
-0.11 -0.3
V
-1.2
55
300
22
pF
85
MHz
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