2SA1363_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1363
Transistors
Features
High hFE : hFE = 150 to 800
High Collector Current (IC = -2A)
High Collector Dissipation PC = 500mW
Small Package For Mounting
Complementary to 2SC3443
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Collector Power Dissipation
Jumction temperature
Storage temperature Range
Symbol
Rating
Unit
VCBO
-20
V
VCEO
-16
V
VEBO
-6
V
IC
-2
A
ICM
-3
A
PC
500
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
■ Classification of hfe
Type
2SA1363-E
Range
150-300
Marking
AE
2SA1363-F
250-500
AF
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -2 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -16 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-1A, IB=- 50mA
VBE(sat) IC=-1A, IB=- 50mA
hFE VCE= -4V, IC= -100mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -2V, IE= 10mA
2SA1363-G
400-800
AG
Min Typ Max Unit
-20
-16
V
-6
-200
nA
-200
-0.17 -0.3
V
-1.2
150
800
42
pF
80
MHz
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