2SA1363 Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

SMD Type
Transistors
High Current Drive Applications
2SA1363
Features
High hFE : hFE = 150 to 800
High Collector Current (IC = -2A)
High Collector Dissipation PC = 500mW
Small Package For Mounting
Complementary to 2SC3443
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Collector Power Dissipation
Jumction temperature
Storage temperature Range
Symbol
Rating
Unit
VCBO
-20
V
VCEO
-16
V
VEBO
-6
V
IC
-2
A
ICM
-3
A
PC
500
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
Testconditons
ICBO VCB = -16V , IE = 0
IEBO VEB = -4V , IC = 0
V(BR)CEO IC = -2mA , RBE =
V(BR)CBO IC = -10ìA , IE = 0
V(BR)EBO IE = -10ìA , IC = 0
hFE VCE = -4V , IC = 100mA
VCE(sat) IC = -1A , IB = -50mA
fT VCE = -2V , IE = 10mA
Cob VCB = -10V , IE = 0 , f = 1MHz
hFE Classification
Marking
Rank
hFE
E
150 300
A
F
250 500
G
400 800
Min Typ Max Unit
-0.2 ìA
-0.2 ìA
-16
V
-20
V
-6
V
150
800
-0.17 -0.3 V
80
MHz
42
pF
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