2SA1362 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, SWITCHING APPLICATIONS)

SMD Type
Silicon PNP Epitaxia
2SA1362
TransistIoCrs
Features
Suitable for driver stage of small motor.
Small package.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-15
V
VCEO
-15
V
VEBO
-5
V
IC
-800
mA
IB
-160
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
hFE Classification
Marking
Rank
hFE
AE
Y
G
120-240
200 400
Symbol
Testconditons
ICBO VCB = -15 V, IE = 0
IEBO VEB = -5 V, IC = 0
V(BR)CEO IC = -10 mA, IB = 0
hFE VCE = -1 V, IC = -100 mA
V] IC = -400 mA, IB = -8 mA
VBE VCE = -1 V, IC = -10 mA
fT VCE = -5 V, IC = -10 mA
Cob VCB = -10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
-100 nA
-100 nA
-15
V
120
400
-0.2 V
-0.5
-0.8 V
120
MHz
13
pF
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