2SA1338_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
TransistIoCrs
PNP Transistors
2SA1338
Features
Adoption of FBET process.
High breakdown voltage : VCEO=-50V.
Large current capacitiy and high fT.
Ultrasmall-sized package permitting sets
to be smallsized, slim.
● Complementary to 2SC3392
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on time
Storage time
Fall time
Common base output capacitance
Transition frequency
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
Unit: mm
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-50
V
VEBO
-5
V
IC
-500
mA
ICP
-800
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Symbol
Test Conditions
Min Typ Max Unit
VCBO Ic= -100 μA， IE=0
-60
VCEO Ic= -1 mA， IB=0
-50
V
VEBO IE= -100μA， IC=0
-5
ICBO
IEBO
VCB= -40 V , IE=0
VEB= -4V , IC=0
-100
nA
-100
VCE(sat) IC=-100 mA, IB=- 10mA
VBE(sat) IC= -100 mA, IB= -10mA
0.15 0.4
V
0.8 1.2
hFE VCE= -5V, IC= -10mA
100
560
ton
70
tstg VCC=-20V,IC=-10|B1=-10|B2=100mA
400
ns
tr
50
Cob VCB= -10V ,f=1MHz
5.6
pF
fT
VCE= -10V, IC= -50mA
200
MHz
■ Classification of hfe
Type
Range
Marking
2SA1338-AL4
100-200
AL4
2SA1338-AL5
140-280
AL5
2SA1338-AL6
200-400
AL6
2SA1338-AL7
280-560
AL7
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