2SA1331_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
TransistIoCrs
PNP Transistors
2SA1331
Features
Fast switching speed.
High breakdown voltage.
Small-sized package permitting the 2SA1331/
2SC3361-applied sets to be made small and slim.
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Electrical Characteristics Ta = 25
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
-60
-50
-5
-150
150
125
-55 to 125
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Delay time
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -40 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-10 mA, IB=- 1mA
VBE(sat) IC= -10 mA, IB= -1mA
hFE VCE= -6V, IC= -1mA
td
Rise time
tr
Storage time
ts
Fall time
Common base output capacitance
Transition frequency
■ Classification of hfe
Type
2SA1331-O4 2SA1331-O5
Range
90-180
135-270
Marking
O4
O5
tf
Cob VCB= -6V, f=100MHz
fT
VCE= -6V, IC= -1mA
2SA1331-O6
200-400
O6
1.Base
2.Emitter
3.collector
Unit
V
mA
mW
℃
Min Typ Max Unit
-60
-50
V
-5
-100
nA
-100
-0.1 -0.4
V
-0.75 -1.1
90
400
40
120
ns
190
200
3.5
pF
100
MHz
www.kexin.com.cn ¹