2SA1330_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
Features
High DC current gain.
High voltage.
● Complementary to 2SC3360
PNP Transistors
2SA1330
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Rating
-200
-200
-5
-100
200
150
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
VCBO
VCEO
VEBO
Ic= -100 μA， IE=0
Ic= -1 mA， IB=0
IE= -100μA， IC=0
Collector-base cut-off current
ICBO VCB= -200 V , IE=0
Emitter cut-off current
IEBO VEB= -5V , IC=0
Collector-emitter saturation voltage *
VCE(sat) IC=-50 mA, IB=- 5mA
Base - emitter saturation voltage *
VBE(sat) IC=-50 mA, IB=- 5mA
Base - emitter voltage *
VBE VCE= -10V, IC= -10mA
DC current gain *
hFE（1） VCE= -10V, IC= -10mA
hFE（2） VCE= -10V, IC=-50mA
Turn-on time
Storage time
Turn-off time
tr
ts
VCC=-10V,VBE(off)=2.5V
IC=-10mA,IB1=IB2=-1.0mA
toff
Collector output capacitance
Cob VCB= -30V, IE= 0,f=1MHz
Transition frequency
fT
VCE= -10V, IE= 10mA
* Pulse test: tp 350 us; duty cycle 0.02.
■ Classification of hfe(1)
Type
2SA1330-O5 2SA1330-O6 2SA1330-O7
Range
90-180
135-270
200-450
Marking
O5
O6
O7
Unit
V
V
V
mA
mW
1.Base
2.Emitter
3.collector
Min Typ Max
-200
-200
-5
-100
-100
-0.21 -0.3
-0.8 -1.2
-0.6 -0.65 -0.7
90 200 450
50 195
0.16
1.3
0.18
3.6
120
Unit
V
nA
V
us
pF
MHz
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