2SA1314_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1314
Transistors
Features
Low Saturation Voltage
: VCE(sat) = -0.5V (max) (IC = -2A, IB = -50mA)
Small Flat Package
Complementary to 2SC2982
1.70 0.1
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulsed *1
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
Tstg
Rating
-20
-10
-6
-2
-4
-2
500
150
-55 to 150
*1 Pulse test: pulse width = 10ms (max), duty cycle = 30% (max)
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -1mA， IE=0
VCEO Ic= -10 mA， IE=0
VEBO IE= -1mA， IC=0
ICBO VCB= -20 V , IE=0
IEBO VEB= -6V , IC=0
VCE(sat) IC=-2A, IB=- 50mA
VBE(sat) IC=-2A, IB=- 50mA
VBE VCE= -1V , IC=-2A
hFE(1) VCE= -1V, IC= -0.5A
hFE(2) VCE= -1V, IC= -4A
Cob VCB= -10V, IE=0,f=1MHz
fT
VCE= -1V, IC= -0.5A
■ Classification of hfe(1)
Type
2SA1314-A
Range
140-280
Marking
TA
2SA1314-B
200-400
TB
2SA1314-C
300-600
TC
1.Base
2.Collector
3.Emitter
Unit
V
A
mW
℃
Min Typ Max Unit
-20
-10
V
-6
-100
nA
-100
-0.2 -0.5
-1.2 V
-0.83 -1.5
140
600
60 120
50
pF
140
MHz
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