2SA1314 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (STROBE FLASH, AUDIO POWER APPLICATIONS)

SMD Type
Audio Power Applications
2SA1314
Transistors
Features
Low Saturation Voltage
: VCE(sat) = -0.5V (max) (IC = -2A, IB = -50mA)
Small Flat Package
Complementary to 2SC2982
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-20
V
Collector-Emitter Voltage
VCEO
-10
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current (DC)
IC
-2
A
Collector Current (Pulsed) *1
ICP
-4
A
Base Current
IB
-2
A
Collector Power Dissipation
PC
500
mW
PC *2
1000
Jumction temperature
Tj
150
Storage temperature Range
Tstg
-55 to +150
*1 Pulse test: pulse width = 10ms (max), duty cycle = 30% (max)
*2 Mounted on ceramic substrate (250 mm² x 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
Testconditons
ICBO VCB = -20V , IE = 0
IEBO VEB = -6V , IC = 0
V(BR)CEO IC = -10mA , IB = 0
V(BR)EBO IE = -1mA , IC = 0
VCE = -1V , IC = -0.5A
hFE
VCE = -1V , IC = -4A
VCE(sat) IC = -2A , IB = -50mA
VBE VCE = -1V , IC = -2A
fT VCE = -1V , IC = -0.5A
Cob VCB = -10V , IE = 0 , f = 1MHz
Min Typ Max Unit
-100 nA
-100 nA
-10
V
-6
V
140
600
60 120
-0.2 -0.5 V
-0.83 -1.5 V
140
MHz
50
pF
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