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2SA1313 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISITOR (AUDIO FREQUENCY LOW POWER AMPLIFIER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)
SMD Type
TransistIoCrs
Features
High voltage: VCEO = -50 V (min)
Small package
Silicon PNP Epitaxial
2SA1313
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-50
V
VEBO
-5
V
IC
-500
mA
IB
-50
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
ICBO VCB = -50 V, IE = 0
IEBO VEB = -5 V, IC = 0
hFE VCE = -1 V, IC = -100 mA
VCE (sat) IC = -100 mA, IB = -10 mA
VBE VCE = -1 V, IC = -100 mA
fT VCE = -6 V, IC = -20 mA
Cob VCB = -6 V, IE = 0, f = 1 MHz
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
70
240
-0.1 -0.25 V
-0.8 -1
V
200
MHz
13
pF
hFE Classification
Marking
Rank
hFE
AC
O
Y
70 140
120 240
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