2SA1298_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SA1298
■ Features
● Collector Current Capability IC=-0.8A
● Collector Emitter Voltage VCEO=-30V
● Low Frequency Power Amplifier Application
● Power Swithing Applications
● Complementary to 2SC3265
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
-35
-30
-5
-800
200
625
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -1mA， IE=0
VCEO Ic= -10 mA， IB=0
VEBO IE= -1mA， IC=0
ICBO VCB= -30 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-500 mA, IB=-20mA
VBE(sat) IC=-500 mA, IB=-20mA
VBE VCE=-1V,IC= -10 mA
hFE(1) VCE= -1V, IC= -100mA
hFE(2) VCE=- 1V, IC= -800mA
Cob VCB= -6V, IE= 0,f=1MHz
fT
VCE= -5V, IC= -10mA
Unit
V
mA
mW
℃/W
℃
Min Typ Max Unit
-35
-30
V
-5
-0.1
uA
-0.1
-0.4
-1.2 V
-0.8
100
320
40
13
pF
120
MHz
■ Classification of hfe(1)
Type
2SA1298-O
Range
100-200
Marking
IO
2SA1298-Y
160-320
IY
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