2SA1298 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, SWITCHING APPLICATIONS)

SMD Type
TransistIoCrs
Silicon PNP Epitaxial
2SA1298
Features
High DC current gain: hFE = 100 320
Low saturation voltage: VCE(sat) = -0.4V(max)
(IC =-500 mA, IB =-20 mA)
Suitable for driver stage of small motor
Small package
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-30
V
VCEO
-25
V
VEBO
-5
V
IC
-800
mA
IB
-160
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
ICBO VCB = -30 V, IE = 0
IEBO VEB = -50 V, IC = 0
V(BR) CEO IC = -10 mA, IB = 0
V(BR) EBO IE = -0.1 mA, IC = 0
hFE VCE = -1 V, IC = -100 mA
VCE (sat) IC = -500 mA, IB = -20 mA
VBE VCE = -1 V, IC = -10 mA
fT VCE = -5 V, IC = -10 mA
Cob VCB = -10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
-25
V
-5
V
100
320
-0.4 V
-0.5
-0.8 V
120
MHz
13
pF
hFE Classification
Marking
hFE
IO
100 200
IY
160 320
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