2SA1257-HF-3_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SA1257-HF
Features
High breakdown voltage.
Small output capacitance.
● Very small-sized package permitting the 2SA1257-HF/
2SC3143-HF applied sets to be made small and slim.
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
-180
-160
-5
-80
-150
200
125
-55 to +125
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= -1 mA， RBE=∞
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
Collector-base cut-off current
ICBO VCB= -120 V , IE=0
Emitter cut-off current
IEBO VEB= -4V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-30mA, IB=- 3mA
Base - emitter saturation voltage
VBE(sat) IC=-30mA, IB=- 3mA
Base - emitter voltage
VBE VCE= -5V , IC=-10mA
DC current gain
hFE VCE= -5V, IC= -10mA
Turn-on time
ton
Storage time
tstg
See Test Circuit.
Fall time
tf
Collector output capacitance
Cob VCB= -10V, f-1MHz
Transition frequency
■ Classification of hfe
fT
VCE= -10V, IC= -10mA
Type 2SA1257-G3-HF 2SA1257-G4-HF 2SA1257-G5-HF
Range
60-120
90-180
135-270
Marking
G3 F
G4 F
G5 F
Unit
V
V
V
mA
mA
mW
Min
-180
-160
-5
60
Typ
0.15
0.95
0.15
2.4
130
Max
-100
-100
-0.7
-1.2
-1.5
270
3.2
Unit
V
nA
V
us
pF
MHz
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