2SA1257-3_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SA1257
Features
High breakdown voltage.
Small output capacitance.
● Very small-sized package permitting the 2SA1257/
2SC3143-applied sets to be made small and slim.
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 ^+0.02
-0.02
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
-180
-160
-5
-80
-150
200
125
-55 to +125
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Turn-on time
Storage time
Fall time
Collector output capacitance
Transition frequency
■ Classification of hfe
Type
2SA1257-G3 2SA1257-G4
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -120 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-30mA, IB=- 3mA
VBE(sat) IC=-30mA, IB=- 3mA
VBE VCE= -5V , IC=-10mA
hFE VCE= -5V, IC= -10mA
ton
tstg
See Test Circuit.
tf
Cob VCB= -10V, f-1MHz
fT
VCE= -10V, IC= -10mA
2SA1257-G5
Range
60-120
90-180
135-270
Marking
G3
G4
G5
Unit
V
V
V
mA
mA
mW
Min
-180
-160
-5
60
Typ
0.15
0.95
0.15
2.4
130
Max
-100
-100
-0.7
-1.2
-1.5
270
3.2
Unit
V
nA
V
us
pF
MHz
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