2SA1256_15 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
TransistIoCrs
PNP Transistors
2SA1256
Features
High fT (230MHz typ), and small Cre (1.1pF typ).
Small NF (2.5dB typ).
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-30
V
VCEO
-20
V
VEBO
-5
V
IC
-30
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
1.Base
2.Emitter
3.collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Noise figure
Voltage gain
Base-collector time constant
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -10 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-20 mA, IB=-1mA
VBE(sat) IC=-20 mA, IB=-1mA
hFE VCE= -6V, IC= -1mA
NF
VCE= -6V, IC= -1mA,f=100MHz
PG
rbb,Cc VCE= -6V, IC= -1mA,f=31.9MHz
Cre VCB= -6V, f=10MHz
fT
VCE= -6V, IC= -1mA
■ Classification of hfe
Type
Range
Marking
2SA1256-E3
60-120
E3
2SA1256-E4
90-180
E4
2SA1256-E5
135-270
E5
Min Typ Max Unit
-30
-20
V
-5
-100
nA
-100
0.5
V
1.2
60
270
2.5
dB
22
11 20 ps
1.1 1.7 pF
150 230
MHz
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