2SA1256 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – High-Frequency Amp Applications

SMD Type
TransistIoCrs
PNP Epitaxial Planar Silicon Transistors
2SA1256
Features
High fT (230MHz typ), and small Cre (1.1pF typ).
Small NF (2.5dB typ).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-30
V
VCEO
-20
V
VEBO
-5
V
IC
-30
mA
PC
150
W
Tj
125
Tstg
-55 to +125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Reverse transfer capacitace
Base-collector time constant
Noise figure
Voltage gain
Symbol
Testconditons
IcBO VCB = -10V , IE = 0
IEBO VEB = -4V , IC = 0
hFE VCE = -6V , IC = -1mA
fT VCE = -6V , IC = -1mA
Cre VCB = -6V , f = 1MHz
rbb,Cc VCE = -6V , IC = -1mA , f = 31.9MHz
NF VCE = -6V , IC = -1mA , f = 100MHz
PG VCE = -6V , IC = -1mA , f = 100MHz
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
60
270
150 230
MHz
1.1 1.7 pF
11 20 ps
2.5
dB
22
dB
hFE Classification
Marking
hFE
E3
60 120
E4
90 180
E5
135 180
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