2SA1255 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

SMD Type
Transistors
Features
High voltage.
Small package.
Silicon PNP Triple Diffused Type
2SA1255
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-200
V
VCEO
-200
V
VEBO
-5
V
IC
-50
mA
IB
-20
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
Testconditons
ICBO VCB = -200 V, IE = 0
IEBO VEB = -5 V, IC = 0
V(BR)CBO IC = -0.1 mA, IE = 0
V(BR)CEO IC = -1 mA, IB = 0
hFE VCE = -3 V, IC = -10 mA
VCE (sat) IC = -10 mA, IB = -1 mA
VBE (sat) IC = -10 mA, IB = -1 mA
fT VCE = -10 V, IC = -2 mA
Cob VCB = -10 V, IE = 0, f = 1 MHz
ton pulse width = 5ìs,duty cycle 2
tstg IB2=-IB1=0.6 Ma
tf VCC=-50V,IC=-6mA
hFE Classification
Marking
Rank
hFE
OO
O
70 140
OY
Y
120 240
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
-200
V
-200
V
70
240
-0.2 -1 V
-0.75 -1.5 V
50 100
MHz
3
7 pF
0.3
ìs
2
ìs
0.4
ìs
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