2SA1252_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
TransistIoCrs
PNP Transistors
2SA1252
Features
High VEBO.
Wide ASO and high durability against breakdown.
● Complementary to 2SC3134
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
-60
-50
-15
-150
-300
200
125
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC forward current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，IB = 0
VEBO IE= -100μA，IC=0
ICBO VCB= -40 V , IE=0
IEBO VEB= -10V , IC=0
VCE(sat) IC=-50 mA, IB=-5mA
VBE(sat) IC=-50 mA, IB=-5mA
hFE VCE= -6V, IC= -1mA
Cob VCB= -6V, f=1MHz
fT
VCE= -6V, IC= -1mA
■ Classification of hfe
Type
Range
Marking
2SA1252-D4
90-180
D4
2SA1252-D5
135-270
D5
2SA1252-D6
200-400
D6
2SA1252-D7
300-600
D7
Unit
V
V
V
mA
mA
mW
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-60
-50
V
-15
-0.1
uA
-0.1
-0.5
V
-1.2
90
600
3.5
pF
100
MHz
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