2SA1244_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

DIP Type
PNP Transistors
2SA1244
TO-251
Transistors
■ Features
● Low collector saturation voltage
● High speed switching time: tstg = 1.0 μs (typ.)
● Complementary to 2SC3074
1 23
123
■ Absolute Maximum Ratings Ta = 25℃
Unit: mm
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-60
Collector - Emitter Voltage
VCEO
-50
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
Base current
IC
-5
A
IB
-1
Ta = 25°C
1
Collector Power Dissipation
PC
W
Tc = 25°C
20
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on time
Storage time
Fall time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO
VCEO
Ic= 100 μA， IE= 0
Ic= 10 mA， IB= 0
VEBO
ICBO
IE= 100μA， IC= 0
VCB= -50 V , IE= 0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-3 A, IB=-150mA
VBE(sat) IC=-3 A, IB=-150mA
hFE(1) VCE= -1V, IC= -1 A
hFE(2) VCE= -1V, IC= -3 A
OUTPUT
ton
20 μs ^{INPUT IB2}
tstg
I_B2
I_B1
V_CC = −30 V
tf
−I_B1 = I_B2 = 0.15 A,
DUTY CYCLE ≤ 1%
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE=- 4V, IC= -1 A
1 Base
2 Collector
3 Emitter
Min Typ Max Unit
-60
-50
V
-5
-1
uA
-1
-0.4
V
-1.2
70
240
30
0.1
1
uS
0.1
170
pF
60
MHz
www.kexin.com.cn ¹