2SA1235_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
TransistIoCrs
PNP Transistors
2SA1235
Features
Small collector to emitter saturation voltage.
Excelent lineary DC forward current gain.
Super mini package for easy mounting.
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation (Ta=25 )
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-50
V
VEBO
-6
V
IC
-200
mA
PC
200
mW
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC forward current gain
Noise figure
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO IC= -1 mA， IB =0
VEBO IE= -100μA，IC=0
ICBO VCB= -50 V , IE=0
IEBO VEB= -6V , IC=0
VCE(sat) IC=-100 mA, IB=-10mA
VBE(sat) IC=-100 mA, IB=-10mA
VCE= -6V, IC= -1mA
hFE
VCE= -6V, IC= -0.1mA
NF VCB= -6V, IE= 0.3mA,f=100 Hz,RG=10kΩ
Cob VCB= -6V, IE= 0,f=1MHz
fT
VCE= -6V, IE= -10mA
■ Classification of hfe(1)
Type
Range
Marking
2SA1235-E
150-300
ME
2SA1235-F
250-500
MF
2SA1235-G
400-800
MG
Min Typ Max Unit
-50
-50
V
-6
-0.1
uA
-0.1
-0.3
V
-1.2
150
800
90
20 dB
4
pF
200
MHz
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