2SA1226 Datasheet, PDF (1/1 Pages) NEC – HIGH FREQUENCY AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

SMD Type
TransistIoCrs
Features
High gain bandwidth product
Low output capacitance
Low noise
Silicon Transistor
2SA1226
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage (RBE = )
VCBO
-40
V
Collector-emitter voltage
VCEO
-40
V
Emitter-base voltage
VEBO
-5.0
V
Collector current - continuous
IC
-30
mA
Total power dissipation at 25 ambient temperature
PT
200
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter vVoltage
Gain bandwidth product
Output capacitance
Noise figure
Symbol
Testconditons
Min Typ
ICBO VCB = -40V , IE = 0
IEBO VEB = -4.0V , IC = 0
hFE VCE = -10V , IC = -1.0mA
40 90
VCE(sat) IC = -10mA , IB = -1.0mA
-0.09
VBE VCE = -10V, IC = -10mA
-0.67 -0.72
fT VCE = -10V , IE = 1.0mA
250 400
Cob VCB = -10V , IE = 0 , f = 1.0MHz
1.1
NF
VCE = -10V, IC = -1.0mA, RG = 500Ù, f
= 1.0MHz
3.5
Max
-0.1
-0.1
180
-0.3
2.0
Unit
ìA
ìA
V
V
MHz
pF
dB
hFE Classification
Marking
hFE
E2
40 80
E3
60 120
E4
90 180
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