2SA1213_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1213
Transistors
Features
Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A)
High Speed Switching Time: tstg = 1.0us (typ.)
Small Flat Package
PC = 1 to 2W (mounted on ceramic substrate)
Complementary to 2SC2873
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Electrical Characteristics Ta = 25
Symbol
Rating
Unit
VCBO
-50
VCEO
-50
V
VEBO
-5
IC
-2
A
IB
-0.4
PC
500
mW
TJ
150
℃
Tstg
-55 to 150
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on time
Storage time
Fall time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -10 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -50 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-1 A, IB=- 50mA
VBE(sat) IC=-1 A, IB=- 50mA
hFE(1) VCE= -2V, IC= -0.5A
hFE(2) VCE= -2 V, IC= -2A
ton
tstg
See Test Circuit.
tf
Cob VCB= -10V, IE= 0 ,f=1MHz
fT
VCE= -2V, IC= -0.5A
■ Classification of hfe(1)
Type
2SA1213-O
Range
70-140
Marking
NO
2SA1213-Y
120-240
NY
Min Typ Max Unit
-50
-50
V
-5
-100
nA
-100
-0.5
V
-1.2
70
240
20
0.1
1
us
0.1
40
pF
120
MHz
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