2SA1203_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1203
Transistors
Features
Suitable For Output Stage of 3 Watts Amplifier
Small Flat Package
PC = 1 to 2W (mounted on ceramic substrate)
Complementary to 2SC2883
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-1.5
A
Base Current
IB
-0.3
A
Collector Power Dissipation
PC
500
mW
PC *
1000
Jumction temperature
Tj
150
Storage temperature Range
Tstg
-55 to +150
* Mounted on ceramic substrate (250 mm² x 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -1 mA， IE=0
VCEO Ic= -10 mA， IB=0
VEBO IE= -1mA， IC=0
ICBO VCB= -30 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-1.5A, IB=- 30mA
VBE(sat) IC=-1.5A, IB=- 30mA
VBE VCE= -2V, IC=-500 mA
hFE VCE= -2V, IC= -500mA
Cob VCE= -10V,IE=0,f=1MHz
fT
VCE= -2V, IE= -500mA
■ Classification of hfe
Type
2SA1203-O
Range
100-200
Marking
HO
2SA1203-Y
160-320
HY
Min Typ Max Unit
-30
-30
V
-5
-100
nA
-100
-2.0
-1.2 V
-1
100
320
50 pF
120
MHz
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