2SA1203 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)

SMD Type
Transistors
Audio Frequency Amplifier Applications
2SA1203
Features
Suitable For Output Stage of 3 Watts Amplifier
Small Flat Package
PC = 1 to 2W (mounted on ceramic substrate)
Complementary to 2SC2883
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-1.5
A
Base Current
IB
-0.3
A
Collector Power Dissipation
PC
500
mW
PC *
1000
Jumction temperature
Tj
150
Storage temperature Range
Tstg
-55 to +150
* Mounted on ceramic substrate (250 mm² x 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
Testconditons
ICBO VCB = -30V , IE = 0
IEBO VEB = -5V , IC = 0
V(BR)CEO IC = -10mA , IB = 0
V(BR)EBO IE = -1mA , IC = 0
hFE VCE = -2V , IC = -500mA
VCE(sat) IC = -1.5A , IB = -0.03A
VBE VCE = -2V , IC = -500mA
fT VCE = -2V , IC = -500mA
Cob VCB = -10V , IE = 0 , f = 1MHz
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
-30
V
-5
V
100
320
-2.0 V
-1.0 V
120
MHz
50 pF
www.kexin.com.cn ¹