2SA1201_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1201
Transistors
■ Features
● High voltage
● High transition frequency
● Complementary to 2SC2881
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-120
VCEO
-120
V
VEBO
-5
IC
-0.8
A
PC
0.5
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -1mA， IE=0
VCEO Ic= -10 mA， IB=0
VEBO IE= -1mA， IC=0
ICBO VCB= -120 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-500 mA, IB=-50mA
VBE(sat) IC=-500 mA, IB=-50mA
VBE VCE=- 5V, IC= -500 mA
hFE VCE= -5V, IC= -100mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -5V, IC= -100mA
Min Typ Max Unit
-120
-120
V
-5
-100
nA
-100
-1
-1.2 V
-1
80
240
30 pF
120
MHz
■ Classification of hfe
Type
Range
Marking
2SA1201-O
80-160
DO
2SA1201-Y
120-240
DY
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