2SA1201 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

SMD Type
Transistors
Voltage Amplifier Applications
2SA1201
Features
High Voltage : VCEO = -120V
High Transition Frequency : fT = 120MHz(typ.)
Small Flat Package
Complementary to 2SC2881
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCEO
-120
V
VCBO
-120
V
VEBO
-5
V
IC
-800
mA
IB
-160
mA
PC
500
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Emitter Cut-off Current
Collector Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transtion Frequency
Collector Output Capacitance
Symbol
Testconditons
IEBO VEB = -5V , IC = 0
ICBO VCB = -120V , IE = 0
V(BR)CEO IC = -10mA , IB = 0
V(BR)EBO IE = -1mA , IC = 0
hFE VCE = -5V , IC = -100mA
VCE(sat) IC = -500mA , IB = -50mA
VBE VCE = -5V , IC = -500mA
fT VCE = -5V , IC = -100mA
Cob VCB = -10V , IE = 0 , f = 1MHz
Min Typ Max Unit
-0.1
A
-0.1
A
-120
V
-5
V
80
240
-1.0 V
-1.0 V
120
MHz
30 pF
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